inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1191 description collector-emitter breakdown voltage- : v (br)ceo = 60v(min) high dc current gain : h fe = 2000(min) @i c = 3.5a low saturation voltage complement to type 2sb881 applications designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 70 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current-continuous 7 a i cp collector current-peak 10 a collector power dissipation @ t a =25 1.75 p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1191 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; r be = 60 v v (br)cbo collector-base breakdown voltage i c = 5ma; i e = 0 70 v v ce( sat ) collector-emitter saturation voltage i c = 3.5a; i b = 7ma 1.5 v v be( sat ) base-emitter saturation voltage i c = 3.5a; i b = 7ma 2.0 v i cbo collector cutoff current v cb = 40v; i e = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 3.0 ma h fe dc current gain i c = 3.5a; v ce = 2v 2000 f t current-gain?bandwidth product i c = 3.5a; v ce = 5v 20 mhz switching times t on turn-on time 0.6 s t stg storage time 3.0 s t f fall time i c = 3a, i b1 = -i b2 = 6ma r l = 6.7 ; v cc = 20v; p w = 50 s; duty cycle 1% 1.7 s isc website www.iscsemi.cn 2
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